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STD30NF06LAG

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET in a DPAK package

Features AEC-Q101qualified Lowthresholddrive Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD30NF06LAG

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR) 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:MOSFET N-CH 60V 28A DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

D30NF06L

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD30NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

STD30NF06

N-CHANNEL60V-0.020ohm-28AIPAK/DPAKSTripFET??IIPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD30NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

STD30NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

STD30NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

STD30NF06L

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

产品属性

  • 产品编号:

    STD30NF06LAG

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - FET,MOSFET - 单个

  • 系列:

    STripFET™

  • 包装:

    卷带(TR)

  • FET 类型:

    N 通道

  • 技术:

    MOSFET(金属氧化物)

  • 25°C 时电流 - 连续漏极 (Id):

    35A(Tc)

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    DPAK

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 描述:

    MOSFET N-CH 60V 28A DPAK

供应商型号品牌批号封装库存备注价格
ST
23+
TO-252
30000
全新原装正品
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
STMicroelectronics
21+
DPAK
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ST(意法)
24+/25+
10000
原装正品现货库存价优
询价
ST
23+
TO252
50000
全新原装正品现货,支持订货
询价
ST
22+
TO252
66900
原厂原装现货
询价
ST
23+
TO252
16900
正规渠道,只有原装!
询价
STMicroelectronics
2022+
TO-252-3,DPak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
22+
TO-252
9000
原装正品 价格极优
询价
更多STD30NF06LAG供应商 更新时间2025-7-16 16:10:00