STD30NF06LAG中文资料汽车级N沟道60 V、22 mOhm典型值、35 A STripFET II功率MOSFET，DPAK封装数据手册ST规格书

描述 Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements.

特性 Features

• AEC-Q101 qualified
• Low threshold drive
• Gate charge minimized

简介

STD30NF06LAG属于分立半导体产品的晶体管-FETMOSFET-单个。由ST制造生产的STD30NF06LAG晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。