N-Channel 60 V (D-S) MOSFET

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VBSEMI

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N-Channel 60-V (D-S) MOSFET

文件：898.97 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

汽车级N沟道60 V、22 mOhm典型值、35 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • AEC-Q101 qualified \n• Low threshold drive \n• Gate charge minimized;

ST

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N-channel 60 V, 0.022 Ohm typ., 35 A STripFET II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Low threshold drive \n• Gate charge minimized;

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 60V 28A DPAK

STMICROELECTRONICS

意法半导体