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STD30NE06LT4中文资料意法半导体数据手册PDF规格书
STD30NE06LT4规格书详情
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.025 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ LOW GATE CHARGE 100°C
■ APPLICATION ORIENTED
CHARACTERIZATION
■ ADD SUFFIX T4 FOR ORDERING IN TAPE
& REEL
产品属性
- 型号:
STD30NE06LT4
- 功能描述:
MOSFET N-Ch 60 Volt 30 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
20+ |
SOT252 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-252 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
17+ |
TO-252 |
6200 |
询价 | |||
ST |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
24+ |
TO252DPAK |
8866 |
询价 | |||
ST |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STMicroelectronics |
2022+ |
TO-252-3,DPak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VBsemi |
25+ |
TO252 |
6212 |
询价 | |||
ST |
20+ |
TO252DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 |


