isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.99 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：115.89 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09041 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：586.42 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT PROOF PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

文件：326.24 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. ■ HIGH INPUT IMPEDANCE ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOW GATE CHARGE ■ HIGH FREQUENCY

文件：504.89 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体