2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7002

N-CHANNELENHANCEMENT-MODEMOSFET

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant.

2N7002

DMOSTransistors(N-Channel)

2N7002

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002

MinisizeofDiscretesemiconductorelements

2N7002

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns

2N7002

NChannelSmallSignalMOSFET

●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

2N7002

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna

2N7002

N-ChannelSmallSignalMOSFET

2N7002

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

2N7002

N-CHANNELTRANSISTOR

Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre