2N7002KM

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2.5KV(HBM) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002KM

N-channelMOSFET

2N7002KM

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

2N7002KM

N-ChannelMosfet

Application ®Load/PowerSwitching ®InterfacingSwitching ©LogicLevelShift

2N7002KQ

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002KQissuitableforautomotiveapplications requirings

2N7002KQB

60VN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Logic-levelcompatible •Sidewettableflanksforoptical

2N7002KT

N-ChannelENHANCEMENTMODEPOWERMOSFET

FEATURES: *Gate-SourceESDProtected:1500V *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchi

2N7002KT

ChannelEnhancementMOSFET

FEATURES •LowGateChargeforFastSwitching. •ESDProtectedGate. APPLICATIONS •PowerManagementLoadSwitch •ESDProtected:1500V •Easilydesigneddrivecircuits

2N7002KT

N-ChannelEnhancementMOSFET