2N7002KDW

Plastic-EncapsulateMOSFET

Features HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

2N7002KDWA

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

2N7002KDW-AU

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

2N7002KDW-AU

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

2N7002KDW-CAR

Plastic-EncapsulateMOSFETS

FEATURE HighdensitycelldesignforLowRDS（on） Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca

2N7002KDW-G

MOSFET

2N7002KE

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V.(HumanBodyModel) •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •High-speedlinedriver. •Low-sideloadswitch.

2N7002KG

N-ChSmallSignalMOSFETwithGateProtection

FEATURES z2kVESDProtection zLowerOn-resistance:2Ω zLowThreshold:2V(Typ.) zLowInputCapacitance:25pF zFastSwitchingPerformance:25nS zLowInputandOutputLeakage APPLICATIONS zDirectLogic-LevelInterface:TTL/CMOS zDrivers:Relays,Solenoi

2N7002K-HF

MOSFET

RoHSDevice N-Channel HalogenFree Features -SmallSignalMOSFET. -ESDprotected:1000V.

2N7002KL

SmallSignalMOSFET380mAmps,60VoltsN?밅hannelSOT-23