2N7002KDWA

N-Channel Enhancement Mode Field Effect Transistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

2N7002KDW-CAR

Plastic-EncapsulateMOSFETS

FEATURE HighdensitycelldesignforLowRDS（on） Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca

2N7002KDW-G

MOSFET

2N7002KE

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V.(HumanBodyModel) •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •High-speedlinedriver. •Low-sideloadswitch.

2N7002KG

N-ChSmallSignalMOSFETwithGateProtection

FEATURES z2kVESDProtection zLowerOn-resistance:2Ω zLowThreshold:2V(Typ.) zLowInputCapacitance:25pF zFastSwitchingPerformance:25nS zLowInputandOutputLeakage APPLICATIONS zDirectLogic-LevelInterface:TTL/CMOS zDrivers:Relays,Solenoi

2N7002K-HF

MOSFET

RoHSDevice N-Channel HalogenFree Features -SmallSignalMOSFET. -ESDprotected:1000V.

2N7002KL

SmallSignalMOSFET380mAmps,60VoltsN?밅hannelSOT-23

2N7002KM

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2.5KV(HBM) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002KM

N-channelMOSFET

2N7002KM

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV