2N7002W

MOSFET(N-Channel)

SOT-323Plastic-EncapsulateMOSFETS MOSFET(N-Channel) V(BR)DSSRDS(on)MAXID 60V5Ω@10V115mA 7Ω@5V

2N7002W

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

300mA,60VN-CHANNELPOWERMOSFET

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage MechanicalData Case:SOT-323,MoldedPlastic Terminals:SolderableperMIL-STD-202,Method208 Terminal

2N7002W

SMDMOSFET

Features •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdrivers,relays,displays,lamps, solenoids

2N7002W

SmallSignalMOSFET

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

2N7002W

ESDProtected:1000V