2N5401C

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

2N5401C

TO-92PACKAGE

2N5401CSM

BipolarPNPDeviceinaHermeticallysealedLCC1

2N5401DCSM

DualBipolarPNPDevicesinahermeticallysealed

2N5401G

AmplifierTransistor(PNPSilicon)

PNPSilicon

2N5401G

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401HR

Hi-RelPNPbipolartransistor150V,0.5A

Description The2N5401HRisasiliconplanarepitaxialPNPtransistoravailableinTO-18andLCC-3packages.ItisspecificallydesignedforaerospaceHi-RelapplicationsandESCCqualifiedaccordingtothe5202-014specification.IncaseofconflictbetweenthisdatasheetandESCCdetailedspeci

2N5401N

PNPSiliconTransistor

Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-160V •Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551N

2N5401RLRA

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401RLRA

AmplifierTransistors

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*