2N5401C

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

2N5401C

TO-92 PACKAGE

2N5401C_00

TO-92 PACKAGE

2N5401C_15

EPITAXIAL PLANAR PNP TRANSISTOR

2N5401CSM

Bipolar PNP Device in a Hermetically sealed LCC1

2N5401CTA

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 0.6A TO92-3

2N5401CYTA

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 0.6A TO92-3