N-Channel 60-V

FEATURES • Military Qualified • Low On-Resistence: 1.3  • Low Threshold: 1.7 V • Low Input Capacitance: 35 pF • Fast Switching Speed: 8 ns • Low Input and Output Leakage BENEFITS • Guaranteed Reliability • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • Hig

文件：52.78 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

TMOS SWITCHING FET TRANSISTORS

文件：441.47 Kbytes 页数：3 Pages

MOTOROLA

摩托罗拉

TMOS SWITCHING TRANSISTOR

文件：156.38 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

文件：21.45 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes 页数：3 Pages

SUTEX

N-Channel Enhancement Mode Power MOSFET

文件：541.05 Kbytes 页数：3 Pages

TTELEC

N-Channel, Enhancement-Mode, Vertical DMOS FET

文件：313.7 Kbytes 页数：10 Pages

MICROCHIP

微芯科技

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：93.33 Kbytes 页数：3 Pages

SEME-LAB

60V, 3 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature co Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技