2N6660中文资料SUTEX数据手册PDF规格书

General Description

The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

特性 Features

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C

► ISS and fast switching speeds

► Excellent thermal stability

► Integral Source-Drain diode

► High input impedance and high gain

► Complementary N- and P-Channel devices

Applications

► Motor controls

► Converters

► Amplifi ers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)