| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N6388 | DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 文件:164.24 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
2N6388 | DARLINGTON SILICON POWER TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS 文件:167.01 Kbytes 页数:3 Pages | BOCA 博卡 | BOCA | |
2N6388 | NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications 文件:92.64 Kbytes 页数:4 Pages | CDIL | CDIL | |
2N6388 | NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. 文件:71.78 Kbytes 页数:1 Pages | CENTRAL | CENTRAL | |
2N6388 | NPN Darlington Power Transistor Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:2N6388 文件:530.51 Kbytes 页数:4 Pages | MCC | MCC | |
2N6388 | POWER TRANSISTORS(65W) 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS 文件:160.99 Kbytes 页数:3 Pages | MOSPEC 统懋 | MOSPEC | |
2N6388 | Power Transistors Power Transistors 文件:347.98 Kbytes 页数:8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
2N6388 | Darlington Power Transistor [multicomp] Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minimum). • Collector-Emitter Saturation Voltage VCE(sat) = 2.0V (Maximum) at IC = 文件:207.55 Kbytes 页数:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
2N6388 | Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications 文件:134.89 Kbytes 页数:3 Pages | ISC 无锡固电 | ISC | |
2N6388 | Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications 文件:163.85 Kbytes 页数:3 Pages | JMNIC 锦美电子 | JMNIC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-N+Darl
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
80V
- 最大电流允许值:
10A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BD267A,BD647,BD699,BD899,BDW73B,BDX53B,
- 最大耗散功率:
65W
- 放大倍数:
β>1000
- 图片代号:
B-10
- vtest:
80
- htest:
999900
- atest:
10
- wtest:
65
产品属性
- 产品编号:
2N6388
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
3V @ 100mA,10A
- 电流 - 集电极截止(最大值):
1mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 5A,3V
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220
- 描述:
TRANS NPN DARL 80V 10A TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-220 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
MOT/ON |
24+ |
TO-220 |
500 |
原装现货假一罚十 |
询价 | ||
ST |
24+ |
TO-220 |
10000 |
原装现货热卖 |
询价 | ||
ONS |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | |||
ST |
新 |
6 |
全新原装 货期两周 |
询价 | |||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ST |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 |
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