COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

文件：190.48 Kbytes 页数：4 Pages

boca

博卡

POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

文件：183.58 Kbytes 页数：4 Pages

MOSPEC

统懋

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistors

DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@IC= 10A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications.

文件：49.04 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain- : hFE= 20-100 @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

文件：247.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 APPLICATIONS ·They are intended for use in power linear and switching applications

文件：117.26 Kbytes 页数：3 Pages

JMNIC

锦美电子

POWER TRANSISTORS COMPLEMENTARY SILICON

... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

文件：190.04 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications

文件：113.16 Kbytes 页数：3 Pages

SAVANTIC

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

文件：94.94 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

文件：68.98 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体