丝印：20N650；Package：TO-220；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N50；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dvidt capability 100% avalanche energy test

文件：1.50495 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N50；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dvidt capability 100% avalanche energy test

文件：1.50495 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：20N60M2EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a D²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：475.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：275.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The T F20N02combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.76703 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体