丝印：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

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