丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：20N06；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：354.27 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20N06W；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20N06TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Features ● VDS =60V,ID =20A RDS(ON)

文件：3.83297 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A

文件：185.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 页数：6 Pages

EVVOSEMI

翊欧