20N06

型号：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

20N06

型号：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

20N06

型号：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The20N06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

20N06

型号：SSD20N06；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

20N06C

型号：NVMFS020N06CT1G；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

20N06W

型号：NVMFWS020N06CT1G；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

20N06TFYWCP

型号：TF20N06；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

20N06C

型号：NTMFS020N06CT1G；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A