丝印：20N06W；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

文件：251.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 m, 28 A

文件：185.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：254.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体