丝印：20DN6C；Package：SO8FL；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：254.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：254.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体