MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

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安森美半导体

丝印：24DN6C；Package：DFN8；MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• NVMFWD024N06C − Wettable Flank Option\n• Enhanced OpticalInspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• These Devices are Pb-;

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安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

文件：143.63 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

ONSEMI

安森美半导体