丝印：24DN6C；Package：DFN8；MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

文件：143.63 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

DFN-8

ON

上传：深圳庞田科技有限公司

DFN

ON

上传：深圳市粤骏腾电子科技有限公司