丝印：5C466L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：232.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：186.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual, N-Channel 40 V, 7.4 m, 52 A

文件：231.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

ON
DFN-8

ON

上传：深圳庞田科技有限公司

ON
DFN

ON

上传：深圳市粤骏腾电子科技有限公司