MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

文件：143.63 Kbytes 页数：6 Pages

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MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m, 25 A

文件：143.63 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel

MOSFET – Power, Single, N-Channel, 30 V, 67 A • Low QG and Capacitance\n• Minimize Driver Losses\n• Low RDS(on)\n• Minimize Conduction Losses\n• Small Footprint (5x6mm)\n• Compact Design\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：283.2 Kbytes 页数：8 Pages

ONSEMI

安森美半导体