丝印：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

场效应管(MOSFET)

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE

文件：188.36 Kbytes 页数：4 Pages

UTC

友顺

Isc N-Channel MOSFET Transistor

文件：249.9 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER M OSFET

文件：132.58 Kbytes 页数：3 Pages

UTC

友顺