丝印：TF20P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF20P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist

文件：2.11233 Mbytes 页数：5 Pages

TUOFENG

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场效应管(MOSFET)

TUOFENG

拓锋半导体

Glass Passivated Bridge Rectifiers

文件：244.97 Kbytes 页数：4 Pages

TSC

台湾半导体

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

文件：50.27 Kbytes 页数：2 Pages

TSC

台湾半导体

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

文件：139.27 Kbytes 页数：2 Pages

TSC

台湾半导体