丝印：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The T F20N02combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.76703 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N025S；Package：TDSON-8；OptiMOS짰2 Power-Transistor

文件：354.11 Kbytes 页数：10 Pages

Infineon

英飞凌