丝印：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The T F20N02combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize

文件：3.76703 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Solar road lights Load switch Uninterruptible power supply

文件：1.77251 Mbytes 页数：5 Pages

YFWDIODE

佑风微

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application solar road lights Load switch Uninterruptible power supply

文件：1.52202 Mbytes 页数：5 Pages

YFWDIODE

佑风微

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：1.57902 Mbytes 页数：5 Pages

YFWDIODE

佑风微