丝印：20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOS Buck converter series Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

文件：158.76 Kbytes 页数：8 Pages

INFINEON

英飞凌

丝印：20N03L；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature • N-Channel • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 175°C operating temperature • dv/dt rated • Ideal for fast switching buck converters • Pb.free lead plating, RoHS compliant

文件：9.34933 Mbytes 页数：9 Pages

INFINEON

英飞凌

丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20N06W；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20N1200；Package：TO-247；1200V/20A RC-IGBT

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as inductive cooking. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC Low induc

文件：150.71 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：20N150；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

文件：294.72 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：482.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-220F；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际