RM20N150LD

Marking：20N150；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

GeneralFeatures ●VDS=150V,ID=20A RDS(ON)=59mΩ(typical)@VGS=10V ●ExcellentgatechargexRDS(on)product(FOM) ●Verylowon-resistanceRDS(on) ●175°Coperatingtemperature ●Pb-freeleadplating ●100%UIStested

IXTK20N150

HighVoltagePowerMOSFETExtendedFBSOA

IXTX20N150

HighVoltagePowerMOSFETExtendedFBSOA

IXTX20N150

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PulseCircuits ·HighVoltagePowerSupplies

LQA20N150C

150V,20ACommon-CathodeDiode

GeneralDescription ThisdevicehasthelowestQRRofany150V Silicondiode.Itsrecoverycharacteristics increaseefficiency,reduceEMIandeliminate snubbers. Applications AC/DCandDC/DCoutputrectification Outputandfreewheelingdiodes Motordrivecircuits DC-ACinverters