丝印：20N150；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

文件：294.72 Kbytes 页数：7 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes 页数：5 Pages

IXYS

艾赛斯

High Voltage Power MOSFET Extended FBSOA

文件：148.52 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 1500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Pulse Circuits · High Voltage Power Supplies

文件：389.48 Kbytes 页数：2 Pages

ISC

无锡固电