丝印：20N；Package：SOT-363；SiGe:C Low Noise Amplifier with Bypass Switch

文件：1.11395 Mbytes 页数：24 Pages

恩XP

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：20N50；Package：TO-220；20A 500V N-channel Enhancement Mode Power MOSFET

文件：1.53702 Mbytes 页数：11 Pages

WXDH

东海半导体

丝印：20N50B；Package：TO-247；20A 500V N-channel Enhancement Mode Power MOSFET

文件：1.55081 Mbytes 页数：10 Pages

WXDH

东海半导体

丝印：20N50D；Package：TO-3P；20A 500V N-channel Enhancement Mode Power MOSFET

文件：1.55081 Mbytes 页数：10 Pages

WXDH

东海半导体

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

文件：133.68 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

文件：370.79 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

文件：176.25 Kbytes 页数：3 Pages

UTC

友顺