丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

20A mps,60 Volts N-CHANNEL MOSFET

文件：193.72 Kbytes 页数：2 Pages

CHONGQING

平伟实业

Fast Switching

文件：67.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

20A mps,60 Volts N-CHANNEL MOSFET

PINGWEI

平伟

场效应管

HXY MOSFET

华轩阳电子

MOS管

Haochang

浩畅

丝印：20N06；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：354.27 Kbytes 页数：4 Pages

SECOS

喜可士