丝印：20M；Package：SOD-123FL；Thyristor Surge Suppressors (TSS)

Features and Benefits Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Eliminates over voltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight 69 mg (approximate) Non degenerative Response Time is

文件：2.90116 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：20M；Package：SOT-5X3；TPS62850x 2.7-V to 6-V, 1-A / 2-A / 3-A Step-Down Converter in SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 1-A, 2-A (continuous),

文件：2.87722 Mbytes 页数：40 Pages

TI

德州仪器

丝印：20M；Package：SOT-5X3；TPS62850x 2.7V to 6V, 1A / 2A / 3A Step-Down Converter in SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7V to 6V • Output voltage from 0.6V to 5.5V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 1A, 2A (continuous), and 3

文件：2.75686 Mbytes 页数：39 Pages

TI

德州仪器

丝印：20M1H012；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A at Tc = 25°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal

文件：1.86416 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：20M1H024；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 89 A at Tc = 25°C • RDS(on) = 24 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.85569 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：20M1H050；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 48 A at Tc = 25°C • RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.82775 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：20M1H075；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 34 A at Tc = 25°C • RDS(on) = 75 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.86472 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：20M1H100；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 26 A at Tc = 25°C • RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal

文件：1.848 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：20MQ；Package：SOT-5X3；TPS62850x-Q1 2.7-V to 6-V, 1-A / 2-A / 3-A Automotive Step-Down Converter in SOT583 Package

1 Features • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to +125°C TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Optimized for low EMI requirements – Optional pseudo-random spread spectrum reduces p

文件：2.98301 Mbytes 页数：43 Pages

TI

德州仪器

丝印：20MQ；Package：SOT-5X3；TPS62850x-Q1 2.7V to 6V, 1A / 2A / 3A Automotive Step-Down Converter in SOT583 Package

1 Features • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to +125°C TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Optimized for low EMI requirements – Optional pseudo-random spread spectrum reduces p

文件：2.99712 Mbytes 页数：43 Pages

TI

德州仪器