丝印：20M1H100；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 26 A at Tc = 25°C • RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal

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