IMYH200R024M1H中文资料英飞凌数据手册PDF规格书

特性 Features

• VDSS = 2000 V at Tvj = 25°C

• IDCC = 89 A at Tc = 25°C

• RDS(on) = 24 mΩ at VGS = 18 V, Tvj = 25°C

• Very low switching losses

• Benchmark gate threshold voltage, VGS(th) = 4.5 V

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance