EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

Infineon

英飞凌

丝印：20M1H012；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A at Tc = 25°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal

文件：1.86416 Mbytes 页数：16 Pages

Infineon

英飞凌

CoolSiC ™ 2000 V SiC 沟槽 MOSFET，采用 TO-247PLUS-4-HCC 封装

\n优势:\n• High power density\n• Excellent reliability\n• Highest efficiency\n• Ease of design;

Infineon

英飞凌

SMT6

ROHM/罗姆

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