P2000DM

Marking：20M；Package：SOD-123FL；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

TPS6285020MDRLR

Marking：20M；Package：SOT-5X3；TPS62850x 2.7-V to 6-V, 1-A / 2-A / 3-A Step-Down Converter in SOT583 Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy (fulltemperaturerange) •TJ=–40°Cto+150°C •Familyof1-A,2-A(continuous),

TPS6285020MDRLR

Marking：20M；Package：SOT-5X3；TPS62850x 2.7V to 6V, 1A / 2A / 3A Step-Down Converter in SOT583 Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy (fulltemperaturerange) •TJ=–40°Cto+150°C •Familyof1A,2A(continuous),and3

IMYH200R012M1H

Marking：20M1H012；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features •VDSS=2000VatTvj=25°C •IDCC=123AatTc=25°C •RDS(on)=12mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustbodydiodeforhardcommutation •.XTinterconnectiontechnologyforbest-in-classthermal

IMYH200R024M1H

Marking：20M1H024；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features •VDSS=2000VatTvj=25°C •IDCC=89AatTc=25°C •RDS(on)=24mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustbodydiodeforhardcommutation •.XTinterconnectiontechnologyforbest-in-classthermalp

IMYH200R050M1H

Marking：20M1H050；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features •VDSS=2000VatTvj=25°C •IDCC=48AatTc=25°C •RDS(on)=50mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustbodydiodeforhardcommutation •.XTinterconnectiontechnologyforbest-in-classthermalp

IMYH200R075M1H

Marking：20M1H075；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features •VDSS=2000VatTvj=25°C •IDCC=34AatTc=25°C •RDS(on)=75mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustbodydiodeforhardcommutation •.XTinterconnectiontechnologyforbest-in-classthermalp

IMYH200R100M1H

Marking：20M1H100；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features •VDSS=2000VatTvj=25°C •IDCC=26AatTc=25°C •RDS(on)=100mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustbodydiodeforhardcommutation •.XTinterconnectiontechnologyforbest-in-classthermal

TPS6285020MQDRLRQ1

Marking：20MQ；Package：SOT-5X3；TPS62850x-Q1 2.7-V to 6-V, 1-A / 2-A / 3-A Automotive Step-Down Converter in SOT583 Package

1Features •AEC-Q100qualifiedforautomotiveapplications –Devicetemperaturegrade1: –40°Cto+125°CTA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •OptimizedforlowEMIrequirements –Optionalpseudo-randomspreadspectrum reducesp

TPS6285020MQDRLRQ1

Marking：20MQ；Package：SOT-5X3；TPS62850x-Q1 2.7V to 6V, 1A / 2A / 3A Automotive Step-Down Converter in SOT583 Package

1Features •AEC-Q100qualifiedforautomotiveapplications –Devicetemperaturegrade1: –40°Cto+125°CTA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •OptimizedforlowEMIrequirements –Optionalpseudo-randomspreadspectrum reducesp