V62SLASH22601-04XE

Marking：12MD；Package：WSON；LP5912-EP Enhanced Product, 500-mA, Low-Noise, Low-IQ LDO

1Features •Inputvoltagerange:1.6Vto6.5V •Outputvoltagerange:0.8Vto5.5V •Outputcurrent:Upto500mA •Lowoutput-voltagenoise:12μVRMS(typ) •PSRRat1kHz:75dB(typ) •Outputvoltagetolerance(VOUT≥3.3V):±2% •LowIQ(enabled,noload):30μA(typ) •Lowd

V62SLASH22601-07XE

Marking：12MG；Package：WSON；LP5912-EP Enhanced Product, 500-mA, Low-Noise, Low-IQ LDO

1Features •Inputvoltagerange:1.6Vto6.5V •Outputvoltagerange:0.8Vto5.5V •Outputcurrent:Upto500mA •Lowoutput-voltagenoise:12μVRMS(typ) •PSRRat1kHz:75dB(typ) •Outputvoltagetolerance(VOUT≥3.3V):±2% •LowIQ(enabled,noload):30μA(typ) •Lowd

V62SLASH22601-09XE

Marking：12MF；Package：WSON；LP5912-EP Enhanced Product, 500-mA, Low-Noise, Low-IQ LDO

1Features •Inputvoltagerange:1.6Vto6.5V •Outputvoltagerange:0.8Vto5.5V •Outputcurrent:Upto500mA •Lowoutput-voltagenoise:12μVRMS(typ) •PSRRat1kHz:75dB(typ) •Outputvoltagetolerance(VOUT≥3.3V):±2% •LowIQ(enabled,noload):30μA(typ) •Lowd

IMBG120R030M1H

Marking：12M1H030；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

IMBG120R045M1H

Marking：12M1H045；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

IMBG120R060M1H

Marking：12M1H060；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

IMBG120R090M1H

Marking：12M1H090；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

IMBG120R140M1H

Marking：12M1H140；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

IMBG120R220M1H

Marking：12M1H220；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

IMBG120R350M1H

Marking：12M1H350；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology