| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：12M2H034；Package：PG-TO263-7-U01；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=43AatTC=100°C •RDS(on)=34mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H040；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=36AatTC=100°C •RDS(on)=39.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H053；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=29AatTC=100°C •RDS(on)=52.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H078；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=21AatTC=100°C •RDS(on)=78.1mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=15AatTC=100°C •RDS(on)=115.7mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpara | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H181；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=10.5AatTC=100°C •RDS(on)=181.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=6.2AatTC=100°C •RDS(on)=233.9mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpar | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H007；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=181AatTC=100°C •RDS(on)=7.5mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H010；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=138AatTC=100°C •RDS(on)=10mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H017；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=84AatTC=100°C •RDS(on)=17.1mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
12M
- 功能描述：
_
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2020+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||||
ON/安森美 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
询价 | ||
原厂原装 |
13+ |
4990 |
原装分销 |
询价 | |||
IR |
100 |
原装现货,价格优惠 |
询价 | ||||
美晶 |
15+ |
XTAL_3225 |
10000 |
原装现货价格有优势量大可以发货 |
询价 | ||
GEN |
24+/25+ |
23 |
原装正品现货库存价优 |
询价 | |||
CEM |
24+ |
SMD-8 |
50000 |
询价 | |||
进口原装 |
23+ |
57 |
1556 |
专业优势供应 |
询价 | ||
IR |
24+ |
DO-4 |
6980 |
原装现货,可开13%税票 |
询价 | ||
N |
24+ |
DO |
3000 |
原装现货假一罚十 |
询价 |
相关规格书
更多- ZBY2387
- TT8J11TCR
- SL222R510-B
- 1303-0-15-15-47-27-04-0
- DC60A20C
- DJT10E13-4PB
- KPT06B20-41PDZ
- 1404065
- 1668182
- MIC2293C-34YMLTR
- DSD1608PAH
- 74LVCE1G00W5-7
- BD00HC0MEFJ-ME2
- IG5261V
- EA1-B0-24-620-52E-CC
- 3CU25R
- SL1830006
- 202A142-3-0
- 750XBXH120A
- 896H-1CH-C-R1-U03-12VDC
- IM06JR
- SZX-SLF-08S
- 17048-ES
- H16WD6025G-10
- DCM37SF
- 3005W5PXX41A10X
- DTS24F25-29JN
- KPT08A8-4S
- KPSE00J14-12S
- HSCMNNN015PA2A5
- SLR-332DC3F
- HSMU-A100-S00J1
- APTGT75SK120TG
- 1404010
- 1507557
- 1517974
- MIC94072YMTTR
- BTS3104SDLATMA1
- ISL88003IH31Z-T7A
- ST72F324K4T6
- ST72F621L4M1
- MSP430F1491IRTDT
- DAC7562SDSCR
- 74LVC1G06FZ4-7
- SN74AC11N
相关库存
更多- CY74FCT240TSOC
- BZX79-C6V2
- ISL21070DIH306Z-TK
- 4693
- KPT06B14-12PW
- DTS24W23-53JC
- 1405243
- 1669770
- C14G50
- DAC7563SDSCR
- DAC7641YB/250
- SLITMASK0.5X12(5582-0001-01)
- L100
- 4430.2300
- W91-X113-5
- 2856702
- SL221R020-B
- ZBY2304
- VE-48HS5-K
- AEV17024
- HE751A1200
- 2333-05-000
- AQV454HAX
- 84140610
- 780-M26-213R001
- KPT07A12-10SXEX
- CA3108E20-29SBF80A176A232
- DTS24W25-29JB
- HSCDAND001BASA3
- HSCMRRN060MDSA3
- SMLK34WBEBW1
- APT20GT60BRDQ1G
- FNC42060F
- 1684043
- 1405242
- VN808TR-32-E
- MIC2289-24YMLTR
- ISL88001IH44Z-T7A
- STM32F101RBH6
- STM32F372VBH6
- ST72F321BR9T6
- AD5390BCPZ-3
- SN74LV04APWRG4
- SN74AUC1GU04DBVR
- 74AUP1G09SE-7
