丝印：12M2H040；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 36 A at TC = 100°C • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.30192 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H040；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 39 A at TC = 100°C • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.25735 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H040；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 40 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold vo

文件：1.32846 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：12M2H040；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.41647 Mbytes 页数：17 Pages

Infineon

英飞凌