IMBG120R040M2H

Marking：12M2H040；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDDC=36AatTC=100°C •RDS(on)=39.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMCQ120R040M2H

Marking：12M2H040；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features •VDSS=1200VatTvj=25°C •IDDC=39AatTC=100°C •RDS(on)=39.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMSQ120R040M2HH

Marking：12M2H040；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features •VDSS=1200VatTvj=25°C •IDDC=40AatTC=100°C •RDS(on)=40mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo

IMZC120R040M2H

Marking：12M2H040；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=34AatTC=100°C •RDS(on)=40mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit