12N

型号：744760112A；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

12N

型号：744760112GA；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

12N

型号：744762112GA；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

12N

型号：D12V0S1U3LP20-7；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

12N65ANF

型号：12N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

12N65ANP

型号：12N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

12N80

型号：12N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=0.64Ω@Vgs=10V,Id=6A LowgateCharge(typical58.2nC) LowCrss(typical6.5pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower

12N06NM5

型号：IPTC012N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100avalanchetested •Superiorthermalperformance •N-Channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-2

12N04LM6

型号：ISC012N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated

12NO4NM6

型号：ISC012N04NM6；Package：PG-TDSON-8FL；OptiMOS™ 6 Power-Transistor, 40 V

Features «Nechannel «Verylowon-resistanceRosion «Superiorthermalresistance. «100avalanchetested «Pb-freeleadplating;RoHScompliant «Halogen-freeaccordingtoIEC61249-2-21 -Optimizedforlowvoltagedriveapplications -Optimizedforbatterypoweredapplications «Oplimiz