丝印：12M2H007；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 181 A at TC = 100°C • RDS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

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