12M2H026

型号：IMBG120R026M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDDC=53AatTC=100°C •RDS(on)=25.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

12M2H026

型号：IMCQ120R026M2H；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features •VDSS=1200VatTvj=25°C •IDDC=58AatTC=100°C •RDS(on)=25.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

12M2H026

型号：IMSQ120R026M2HH；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features •VDSS=1200VatTvj=25°C •IDDC=59AatTC=100°C •RDS(on)=26mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo

12M2H026

型号：IMZC120R026M2H；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=49AatTC=100°C •RDS(on)=25mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit