| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：12M2H012；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 Features •VDSS=1200VatTvj=25°C •IDDC=102AatTC=100°C •RDS(on)=12.2mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpara | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H012；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features •VDSS=1200VatTvj=25°C •IDDC=89AatTC=100°C •RDS(on)=12mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H012；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features •VDSS=1200VatTvj=25°C •IDDC=91AatTC=100°C •RDS(on)=12mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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