丝印：12M2H022；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 62 A at TC = 100°C • RDS(on) = 21.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.31598 Mbytes 页数：17 Pages

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英飞凌

丝印：12M2H022；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 57 A at TC = 100°C • RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.37243 Mbytes 页数：17 Pages

Infineon

英飞凌