型号：IMZA120R030M1H；Package：PG-TO247-4-STD-NT3.7；CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 70 A at Tc = 25°C • RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can

文件：1.55945 Mbytes 页数：17 Pages

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型号：IMBG120R030M1H；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

文件：1.26252 Mbytes 页数：17 Pages

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型号：IMW120R030M1H；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.18024 Mbytes 页数：17 Pages

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型号：IMZ120R030M1H；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27998 Mbytes 页数：17 Pages

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