丝印：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off s

文件：1.27807 Mbytes 页数：17 Pages

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英飞凌

丝印：12M1H060；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

文件：1.26477 Mbytes 页数：17 Pages

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英飞凌

丝印：12M1H060；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.1785 Mbytes 页数：17 Pages

INFINEON

英飞凌

CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off s

文件：1.27807 Mbytes 页数：17 Pages

INFINEON

英飞凌