IMZ120R060M1H

Marking：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltageforeasyandsimplegatedrive FullycontrollabledV/dt Robustbodydiodeforhardcommutation Temperatureindependentturn-offs

IMBG120R060M1H

Marking：12M1H060；Package：PG-TO263-7；CoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology

IMW120R060M1H

Marking：12M1H060；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET