首页>IMZA120R030M1H>规格书详情
IMZA120R030M1H中文资料英飞凌数据手册PDF规格书
| 厂商型号 |
IMZA120R030M1H |
| 功能描述 | CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology |
| 丝印标识 | |
| 封装外壳 | PG-TO247-4-STD-NT3.7 |
| 文件大小 |
1.55945 Mbytes |
| 页面数量 |
17 页 |
| 生产厂商 | Infineon Technologies AG |
| 企业简称 |
INFINEON【英飞凌】 |
| 中文名称 | 英飞凌科技股份公司官网 |
| 原厂标识 |  |
| 数据手册 | |
| 更新时间 | 2025-6-26 17:30:00 |
| 人工找货 | IMZA120R030M1H价格和库存，欢迎联系客服免费人工找货 |
IMZA120R030M1H规格书详情
Features
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 70 A at Tc = 25°C
• RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Short circuit withstand time 3 μs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | |||
Infineon(英飞凌) |
22+ |
N/A |
3206 |
原装正品物料 |
询价 | ||
INFINEON |
22+ |
NA |
1206 |
原装正品支持实单 |
询价 | ||
Infineon |
23+ |
PG-TO247-4 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO247-4-3 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO247-4-3 |
25630 |
原装正品 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-4-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原装,质量保证 |
询价 | ||
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||||
Infineon Technologies |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
询价 |
