CoolSiC ™ 1200V SiC 沟槽MOSFET，采用TO247-4封装

The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These in • Best in class switching and conduction losses\n• Benchmark high threshold voltage, Vth > 4 V\n• 0V turn-off gate voltage for easy and simple gate drive\n• Wide gate-source voltage range\n• Robust and low loss body diode rated for hard commutation\n• Temperature independent turn-off switching losse;

Infineon

英飞凌

丝印：12M1H030；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.27998 Mbytes 页数：17 Pages

Infineon

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SiC N-Channel MOSFET

FEATURES ·VDSS = 1200 V at TJ= 25°C ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 30mΩ（TYP.）@VGS=18V ;TJ= 25℃ ·Very low switching losses ·Easy to Parallel and Simple to Drive APPLICATIONS ·General purpose drives (GPD) ·EV-Charging ·Online UPS/Industrial UPS ·String inverters ·

文件：400.98 Kbytes 页数：4 Pages

ISC

无锡固电

CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 70 A at Tc = 25°C • RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can

文件：1.55945 Mbytes 页数：17 Pages

Infineon

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